| PART |
Description |
Maker |
| 1SS94 1SS92 1SS93 |
SILICON EPITAXIAL PLANAR ULTRA-HIGH SPEED SWITCHING DIODES
|
ROHM[Rohm]
|
| CMAD4448 |
SURFACE MOUNT SILICON ULTRA HIGH SPEED SWITCHING DIODE
|
Central Semiconductor Corp
|
| KDS196 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC Holdings
KEC(Korea Electronics)
|
| P4C148-55PM P4C149 P4C149-25CC P4C149-25CM P4C149- |
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 超高速每1000 × 4静态CMOS五羊
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 25 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 10 ns, PDIP18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 20 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 超高速每1000 × 4静CMOS五羊
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 35 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 35 ns, CDIP18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 15 ns, CDIP18
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| HN1D01F07 HN1D01F |
Silicon Epitaxial Planar Type Ultra-High-Speed Switching Applications
|
Toshiba Semiconductor
|
| TK50X15J1 |
Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS?
Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS楼虏)
|
Toshiba Semiconductor
|
| 1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
|
TOSHIBA
|
| HN1D03F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
